Reparaz, Juan SebastiánMuniz, Luis AntonioWagner, Markus R.Goñi, Alejandro R.Alonso, Maria IsabelHoffmann, AxelMeyer, Bruno K.2020-03-102020-03-102010-06-090003-6951https://depositonce.tu-berlin.de/handle/11303/10906http://dx.doi.org/10.14279/depositonce-9799This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 96, 231906 (2010) and may be found at https://doi.org/10.1063/1.3447798."From Raman scattering on a-plane wurtzite ZnO crystals we obtained a decreasing splitting between longitudinal and transversal optical phonons with A1 and E1 symmetry as a function of hydrostatic pressure up to 5.5 GPa. Consequently, the transverse effective charge (e∗T) exhibits a strong reduction with increasing pressure, yielding 2.17–14.6×10−3 P/GPa and 2.04–13.7×10−3 P/GPa (in units of the elementary charge) for the A1 and E1 phonons, respectively. We find a clear systematic in the linear pressure coefficient of e∗T with bond polarity for the series of wide-band gap semiconductors SiC, AlN, GaN, and ZnO.en530 PhysikZnO crystalsa-plane wurtzite ZnOsemiconductorpressure dependenceArticle1077-3118