Miah, Mohammad JarezKettler, T.Posilović, KristijanKalosha, V. P.Skoczowsky, D.Rosales, RicardoBimberg, DieterPohl, J.Weyers, Markus2022-01-072022-01-072014-10-130003-6951https://depositonce.tu-berlin.de/handle/11303/16103http://dx.doi.org/10.14279/depositonce-14877This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 105, 151105 (2014) and may be found at https://doi.org/10.1063/1.4898010.High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M2 is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm−2sr−1 is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.en530 Physikwave propagationoptical resonatorsoptical fieldconvertersquantum efficiencyepitaxyoptical propertiesquantum wellswaveguideslasersArticle1077-3118