Fan, FanYu, YueyangAmiri, Seyed Ebrahim HashemiQuandt, DavidBimberg, DieterNing, C. Z.2020-05-222020-05-2220170003-6951https://depositonce.tu-berlin.de/handle/11303/11205http://dx.doi.org/10.14279/depositonce-10093This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 110, 171105 (2017) and may be found at https://doi.org/10.1063/1.4982621.Semiconductor nanolasers are potentially important for many applications. Their design and fabrication are still in the early stage of research and face many challenges. In this paper, we demonstrate a generally applicable membrane transfer method to release and transfer a strain-balanced InGaAs quantum-well nanomembrane of 260 nm in thickness onto various substrates with a high yield. As an initial device demonstration, nano-ring lasers of 1.5 μm in outer diameter and 500 nm in radial thickness are fabricated on MgF2 substrates. Room temperature single mode operation is achieved under optical pumping with a cavity volume of only 0.43λ03 (λ0 in vacuum). Our nano-membrane based approach represents an advantageous alternative to other design and fabrication approaches and could lead to integration of nanolasers on silicon substrates or with metallic cavity.en530 Physiksemiconductorsnanomaterialsquantum wellsgraphenelaserlight sensitive materialsquantum opticsplasmonicsscanning electron microscopyphotoluminescence spectroscopyArticle1077-3118