Lingnau, BenjaminLüdge, KathySchöll, EckehardChow, Weng W.2022-01-062022-01-062010-09-130003-6951https://depositonce.tu-berlin.de/handle/11303/16086http://dx.doi.org/10.14279/depositonce-14860This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 97, 111102 (2010) and may be found at https://doi.org/10.1063/1.3488004.We investigate many-body and nonequilibrium effects on the dynamical behavior of a quantum-dot laser diode. Simulations, based on the Maxwell-semiconductor-Bloch equations, show strong dependence of the turn-on delay on initial cavity detuning, because of a dynamical shift in the quantum-dot distribution caused by band gap renormalization. Gain switch behavior is found to be insensitive to inhomogeneous broadening, because the balancing between many-body and free-carrier effects inhibits a cavity resonance walk-off. Both the relaxation oscillation damping and frequency are found to increase with decreasing inhomogeneous broadening widths. However, in contrast to bulk and quantum-well lasers, oscillation damping increases less than the frequency.en530 Physikdynamicspopulationleptonsmany body problemsemission spectroscopysemiconductor analysiselectron densitycavity resonancequantum dotsrelaxation oscillationsgain-switchedlasersArticle1077-3118