Fischbach, SarahKaganskiy, ArsentyTauscher, Esra Burcu YararGericke, FabianThoma, AlexanderSchmidt, RonnyStrittmatter, AndréHeindel, TobiasReitzenstein, Stephan2020-02-172020-02-172017-07-050003-6951https://depositonce.tu-berlin.de/handle/11303/10728http://dx.doi.org/10.14279/depositonce-9625This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 111, 011106 (2017) and may be found at https://doi.org/10.1063/1.4991389.We present an efficient broadband single-photon source which is fabricated by a flip-chip gold-bonding technique and in-situ electron beam lithography. The device comprises a single InGaAs quantum dot that is centered at the bottom of a monolithic mesa structure and located above a gold mirror for enhanced photon-extraction efficiency. We show a photon-extraction efficiency of ηext=(18±2) % into a numerical aperture of 0.4 and a high suppression of multi-photon events from this source with g(2)(0)=0.015±0.009. Our deterministic device with a backside gold mirror can be combined with electrical contacts and piezo-tuning capabilities in future refinements, which represents an important step towards a spectrally tunable plug-and-play quantum-light source with broadband enhancement for photonic quantum networks.en530 Physikcrystal microstructureelectron beam lithographygallium arsenideIII-V semiconductorsindium compoundssemiconductor devicessemiconductor growthsemiconductor quantum dotsArticle1077-3118