Thin-film flip-chip UVB LEDs realized by electrochemical etching
Thin-film flip-chip UVB LEDs realized by electrochemical etching
Bergmann, Michael A.; Enslin, Johannes; Hjort, Filip; Wernicke, Tim; Kneissl, Michael; Haglund, Åsa
FG Experimentelle Nanophysik und Photonik
We demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al0.37Ga0.63N layer. The electroluminescence spectrum of the TFFC LED corresponds well to the as-grown LED structure, showing no sign of degradation of structural and optical properties by electrochemical etching. This is achieved by a proper epitaxial design of the sacrificial layer and the etch stop layers in relation to the LED structure and the electrochemical etch conditions. Enabling a TFFC UV LED is an important step toward improving the light extraction efficiency that limits the power conversion efficiency in AlGaN-based LEDs.
