Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

dc.contributor.authorGogova, Daniela
dc.contributor.authorPetrov, P. P.
dc.contributor.authorBügler, Max
dc.contributor.authorWagner, Markus R.
dc.contributor.authorNenstiel, Christian
dc.contributor.authorCallsen, Gordon
dc.contributor.authorSchmidbauer, Martin
dc.contributor.authorKucharski, R.
dc.contributor.authorZajac, M.
dc.contributor.authorDwilinski, R.
dc.contributor.authorPhillips, M. R.
dc.contributor.authorHoffmann, Axel
dc.contributor.authorFornari, Roberto
dc.date.accessioned2020-02-27T16:23:46Z
dc.date.available2020-02-27T16:23:46Z
dc.date.issued2013-05-29
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 113, 203513 (2013) and may be found at https://doi.org/10.1063/1.4807581.en
dc.description.abstractWe studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown by the ammonothermal method. The investigated samples have an extremely low dislocation density (DD) of less than 5 × 104 cm−2, which results in very narrow high-resolution x-ray rocking curves. The a and c lattice parameters of these stress-free GaN samples were precisely determined by using an x-ray diffraction technique based on the modified Bond method. The obtained values are compared to the lattice parameters of free-standing GaN from different methods and sources. The observed differences are discussed in terms of free-electron concentrations, point defects, and DD. Micro Raman spectroscopy revealed a very narrow phonon linewidth and negligible built-in strain in accordance with the high-resolution x-ray diffraction data. The optical transitions were investigated by cathodoluminescence measurements. The analysis of the experimental data clearly demonstrates the excellent crystalline perfection of ammonothermal GaN material and its potential for fabrication of non-polar substrates for homoepitaxial growth of GaN based device structures.en
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/10853
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-9748
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherGaNen
dc.subject.otherammonothermal methoden
dc.subject.otherx-ray diffractionen
dc.subject.otherRaman spectroscopyen
dc.titleStructural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal methoden
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber203513en
dcterms.bibliographicCitation.doi10.1063/1.4807581en
dcterms.bibliographicCitation.issue20en
dcterms.bibliographicCitation.journaltitleJournal of Applied Physicsen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume113en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften>Inst. Festkörperphysik>FG Optische Charakterisierung von Halbleiternde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Optische Charakterisierung von Halbleiternde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen
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