A write time of 6ns for quantum dot–based memory structures

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dc.contributor.authorGeller, Martin
dc.contributor.authorMarent, A.
dc.contributor.authorNowozin, Tobias
dc.contributor.authorBimberg, Dieter
dc.contributor.authorAkçay, N.
dc.contributor.authorÖncan, N.
dc.date.accessioned2022-01-20T14:35:30Z
dc.date.available2022-01-20T14:35:30Z
dc.date.issued2008-03-04
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 92, 092108 (2008) and may be found at https://doi.org/10.1063/1.2890731.en
dc.description.abstractThe concept of a memory device based on self-organized quantum dots (QDs) is presented, enabling extremely fast write times, limited only by the charge carrier relaxation time being in the picosecond range. For a first device structure with embedded InAs∕GaAs QDs, a write time of 6ns is demonstrated. A similar structure containing GaSb∕GaAs QDs shows a write time of 14ns. These write times are independent of the localization energy (e.g., storage time) of the charge carriers and at the moment are limited only by the experimental setup and the parasitic cutoff frequency of the 𝑅𝐶 low pass of the device.en
dc.description.sponsorshipEC/FP6/500101/EU/Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics/SANDIEen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16180
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14954
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherMoore's lawen
dc.subject.othertwo-dimensional electron gasen
dc.subject.otherresonant tunnelingen
dc.subject.otherelectronic transporten
dc.subject.othernanowiresen
dc.subject.otherenergy use and applicationsen
dc.subject.otherPIN diodeen
dc.subject.othermetal oxidesen
dc.subject.otherself assemblyen
dc.titleA write time of 6ns for quantum dot–based memory structuresen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber92108en
dcterms.bibliographicCitation.doi10.1063/1.2890731en
dcterms.bibliographicCitation.issue9en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume92en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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