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Influencing modulation properties of quantum-dot semiconductor lasers by carrier lifetime engineering

Lingnau, Benjamin; Lüdge, Kathy; Chow, Weng W.; Schöll, Eckehard

The relaxation oscillation (RO) parameters and modulation properties of quantum-dot lasers are investigated depending on effective charge carrier scattering lifetimes of the confined quantum-dot states. We find three dynamical regimes of the laser, characterized by the level of synchronization between carrier dynamics in quantum-dots and quantum-well. For scattering rates similar to the RO frequency, a strong damping is found. On either side of this regime, simulations show low RO damping and improved dynamical response. Depending on the regime, the modulation response differs from conventional analytical predictions. Our results suggest the possibility of tailoring quantum-dot laser dynamical behavior via bandstructure engineering.
Published in: Applied Physics Letters, 10.1063/1.4754588, American Institute of Physics (AIP)
  • This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 101, 131107 (2012) and may be found at https://doi.org/10.1063/1.4754588.