Single-photon emission from InGaAs quantum dots grown on (111) GaAs

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dc.contributor.authorStock, Erik
dc.contributor.authorWarming, Till
dc.contributor.authorOstapenko, Irina
dc.contributor.authorRodt, Sven
dc.contributor.authorSchliwa, Andrei
dc.contributor.authorTöfflinger, Jan Amaru
dc.contributor.authorLochmann, Anatol
dc.contributor.authorToropov, Aleksandr I.
dc.contributor.authorMoshchenko, Sergej A.
dc.contributor.authorDmitriev, Dimitry V.
dc.contributor.authorHaisler, Vladimir A.
dc.contributor.authorBimberg, Dieter
dc.date.accessioned2022-01-19T20:23:33Z
dc.date.available2022-01-19T20:23:33Z
dc.date.issued2010-03-04
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 96, 093112 (2010) and may be found at https://doi.org/10.1063/1.3337097.en
dc.description.abstractIn this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤40𝜇eV down to the determination limit of our setup (10𝜇eV) was observed.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16168
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14942
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherquantum informationen
dc.subject.othermonochromatorsen
dc.subject.otherexcitonsen
dc.subject.othermicro-photoluminescenceen
dc.subject.otherphotoelectric effecten
dc.subject.otherphotonic entanglementen
dc.subject.otherquantum dotsen
dc.subject.otherpiezoelectricityen
dc.subject.otherself assemblyen
dc.subject.otherspectroscopyen
dc.titleSingle-photon emission from InGaAs quantum dots grown on (111) GaAsen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber093112en
dcterms.bibliographicCitation.doi10.1063/1.3337097en
dcterms.bibliographicCitation.issue9en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume96en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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